SSG4N10E Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4N10E
4A, 100V, R_DS(ON) 120mΩ
Dual-N Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_j = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
BVDSS
100
-
-
V
Gate-Threshold Voltage
VGS(th)
1
-
3
V
Gate-Body Leakage
IGSS
-
-
±10
µA
Zero Gate Voltage Drain Current
-
-
1
IDSS
µA
-
-
30
Drain-Source On-Resistance ²
-
-
120
RDS(ON)
mΩ
-
-
135
Gate Resistance
Rg
-
2.5
-
Ω
Total Gate Charge (VGS= 4.5V)
Qg
-
6.1
-
Total Gate Charge
Gate-Source Charge
Qg
-
13
-
nC
Qgs
-
2.2
-
Gate-Drain (“Miller”) Charge
Qgd
-
2.4
-
Turn-On Delay Time
Td(on)
-
10
-
Rise Time
Turn-Off Delay Time
Tr
-
7
-
nS
Td(off)
-
22
-
Fall Time
Tf
-
4
-
Input Capacitance
Ciss
-
585
-
Output Capacitance
Coss
-
36
-
pF
Reverse Transfer Capacitance
Crss
-
20
-
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy ⁵
EAS
4
-
-
mJ
Source-Drain Diode
Test condition
VGS=0V, ID=250µA
VDS=VGS, ID =250µA
VGS=±20V
VDS=80V,VGS=0, TJ=25°C
VDS=80VGS=0, TJ=85°C
VGS=10V, ID =4A
VGS=4.5V, ID =3.5A
f=1.0MHz
ID= 4A
VDS= 30V
VGS= 10V
VDD= 30V
ID= 1A
VGEN= 10V
RG= 6Ω
RL= 30Ω
VGS=0V
VDS=30V
f=1.0MHz
VDD= 25V, L=0.5mH, IAS= 4A
Continuous Source Current1,6
Pulsed Source Current2,6
Forward On Voltage ²
IS
-
-
4
A
VG = VD=0V, Force Current
ISM
-
-
15
A
VDS
-
-
1.3
V IS=4A, VGS=0V, TJ=25°C
Reverse Recovery Time
Reverse Recovery Charge
trr
-
25
-
nS
IF=4A, dl/dt=100A/µs, TJ=25°C
Qrr
-
34
-
nC
Notes:
1. Surface mounted on a 1 inch² FR-4 board with 2OZ copper. 135℃/W when mounted on Min. copper pad.
2. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.5mH, IAS=6A.
4. The power dissipation is limited by 150℃ junction temperature.
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
21-May-2014 Rev. A
Any changes of specification will not be informed individually.
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