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| SSG4N10E Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG4N10E
4A, 100V, RDS(ON) 120mâ¦
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
DESCRIPTION
The SSG4N10E provide the designer with the best
Combination of fast switching, ruggedized device design,
Ultra low on-resistance and cost-effectiveness.
FEATURES
Low on-resistance
Simple Drive Requirement
Double-N MosFET Package
SOP-8
LD
M
AC
JK
H
G
B
FE
MARKING CODE
4N10ESS
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size
13â inch
Dimensions in millimeters
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current@ VGS =10V 1
TA = 25°C
ID
4
TA = 70°C
3.1
Pulsed Drain Current 2
IDM
15
Single Pulse Avalanche Energy 3
EAS
9
Avalanche Current
Power Dissipation@ TA=25°C 4
IAS
6
PD
1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Ratings
Thermal Resistance Junction-ambient (Max.) 1
Thermal Resistance Junction-Case (Max.) 1
RθJA
85
RθJC
50
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
21-May-2014 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
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