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| SSG4890N Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG4890N
1.9 A, 150 V, RDS(ON) 700 mï
Dual-N Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Static
Gate-Threshold Voltage
VGS(th)
1
-
Gate-Body Leakage
IGSS
-
-
Zero Gate Voltage Drain Current
IDSS
-
-
-
-
On-State Drain Current 1
ID(on)
10
-
Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
-
-
gfs
-
-
-
11.3
Diode Forward Voltage
VSD
-
0.75
Dynamic 2
Total Gate Charge
Qg
-
7.0
Gate-Source Charge
Qgs
-
1.1
Gate-Drain Charge
Qgd
-
2.0
Turn-On Delay Time
Td(on)
-
8
Rise Time
Tr
-
24
Turn-Off Delay Time
Td(off)
-
35
Fall Time
Tf
-
10
Notes
1 Pulse testï¼PW ⦠300μs duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
-
±100
1
10
-
700
1200
-
-
-
-
-
-
-
-
-
Unit
Test conditions
V VDS= VGS, ID= 250μA
nA VDS= 0V, VGS= ±8V
μA VDS= 120V, VGS= 0V
μA VDS= 120V, VGS= 0V, TJ= 55°C
A VDS= 5V, VGS= 10V
m⦠VGS= 10V, ID= 1.9A
VGS= 5.5V, ID= 1.6A
S VDS= 10V, ID= 1.9A
V IS= 1.6A, VGS= 0V
ID= 1.9A
nC VDS= 10V
VGS= 5.5V
VDD= 10V
nS
ID= 1A
VGEN= 4.5V
RL= 15â¦
http://www.SeCoSGmbH.com/
10-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
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