SSG4890N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4890N
1.9 A, 150 V, R_DS(ON) 700 m
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SOP-8 saves board space.
 Fast switching speed.
 High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13’ inch
SOP-8
B
A
H
G
LD
M
C
N
J^K
FE
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
S
G
S
G
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D @ T_A = 25°C
I_DM
I_S
P_D @ T_A = 25°C
T_J, T_STG
Maximum Junction to Ambient ^a
THERMAL RESISTANCE RATINGS
t ≦ 10 sec
Steady State
R_θJA
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings
150
±20
5.2
20
1.6
2.1
-55 ~ 150
40
80
D
D
D
D
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
10-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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