SSG4536C_15 Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4536C
N-Ch: 7.1A, 30V, R_DS(ON) 28 mΩ
P-Ch: -6A, -30V, R_DS(ON) 39 mΩ
N & P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol ^Ch Min. Typ. Max. Unit
Static
Gate Threshold Voltage
N
1
-
VGS(th)
P -1
-
-
V
-
Gate-Body Leakage Current
N
-
IGSS
P
-
-
±100
nA
-
±100
N
-
Zero Gate Voltage Drain Current IDSS
P
-
-
1
µA
-
-1
On-State Drain Current ¹
N 20
-
-
ID(on)
A
P -20
-
-
-
N
-
Drain-Source On-Resistance ¹
RDS(ON)
-
P
-
-
28
-
42
mΩ
-
39
-
59
N
-
25
-
Forward Transconductance ¹
gfs
S
P
-
10
-
Dynamic ²
Total Gate Charge
N
-
4
-
Qg
P
-
10
-
Gate-Source Charge
N
-
1.1
-
Qgs
nC
P
-
2.2
-
Gate-Drain(“Miller”) Charge
N
-
1.4
-
Qgd
P
-
1.7
-
Turn-On Delay Time
N
-
8
-
Td(on)
P
-
10
-
Rise Time
Turn-Off Delay Time
N
-
5
-
Tr
P
-
2.8
-
nS
N
-
23
-
Td(off)
P
-
53.6
-
Fall Time
N
-
3
-
Tf
P
-
46
-
Notes
1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
Teat Conditions
VDS=VGS, ID=250µA
VDS=VGS, ID= -250µA
VDS=0, VGS=20V
VDS=0, VGS= -20V
VDS=24V, VGS=0
VDS= -24V, VGS=0
VDS=5V, VGS=10V
VDS= -5V, VGS= -10V
VGS=10V, ID=7.1A
VGS=4.5V, ID=5.8A
VGS= -10V, ID= -6A
VGS= -4.5V, ID= -4.9A
VDS=15V, ID=6.9A
VDS= -15V, ID= -5.2A
N-Channel
ID=6.9A, VDS=15V, VGS=10V
P-Channel
ID= -5.2A, VDS= -15V, VGS= -10V
N-Channel
VDD=15V, VGS=10V
ID=1A, RGEN=6Ω
P-Channel
VDD= -15V, VGS= -10V
ID= -1A, RGEN= 6Ω
http://www.SeCoSGmbH.com/
12-Sep-2012 Rev. A
Any changes of specification will not be informed individually.
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