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| SSD15N10_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSD15N10
15A, 100V, RDS(ON) 110mâ¦
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Drain-Source Breakdown Voltage
BVDSS
100
-
-
V VGS=0, ID=250μA
Gate Threshold Voltage
VGS(th)
1.0
-
2.5
V VDS=VGS, ID=250μA
Gate-Source Leakage Current
IGSS
-
-
±100 nA VGS= ±20V
Drain-Source Leakage Current
Static Drain-Source On-Resistance 2
IDSS
RDS(ON)
-
-
1
μA VDS=80V, VGS=0
-
100
110
m⦠VGS=10V, ID=8A
Total Gate Charge 2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
26.2
-
-
4.6
-
-
5.1
-
-
4.2
-
-
8.2
-
-
35.6
-
-
9.6
-
ID=10A
nC VDS=80V
VGS=10V
VDS=50V
ID= 10A
nS VGS=10V
RL=5â¦
RG=3.3â¦
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
1535
-
VGS=0
Coss
-
60
-
pF VDS=15V
f=1.0MHz
Crss
-
37
-
Gate Resistance
Rg
-
2
-
⦠f=1.0MHz
Source-Drain Diode
Forward On Voltage 2
VSD
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test.
3. Surface Mounted on 1 in2 copper pad of FR4 Board.
-
-
1.2
V IS=8.0A, VGS=0V
http://www.SeCoSGmbH.com/
07-Mar-2013 Rev. E
Any changes of specification will not be informed individually.
Page 2 of 4
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