SSD15N10_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSD15N10
15A, 100V, R_DS(ON) 110mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD15N10 provide the designer with the best
combination of fast switching. The TO-252 package is
universally preferred for all commercial-industrial
surface mount applications. The device is suited for
charger, industrial and consumer environment.
FEATURES
 R_DS(on) ≦ 100mΩ @ V_GS = 10V
 Super high density cell design for extremely low R_DS(on)
 Exceptional on-resistance and maximum DC current
capability
MARKING
15N10
 Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13’ inch
TO-252(D-Pack)
A
B
C
D
GE
K
HF
N
O
P
M
J
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4
6.8
J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20

Drain

Gate
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain-Source Voltage
Gate-Source Voltage
V_DS
100
V_GS
±20
Continuous Drain Current
Pulsed Drain Current ¹
T_C=25°C
I_D
T_C=70°C
I_DM
15
13.8
24
Power Dissipation
T_C=25°C
T_A=25°C
Operating Junction and Storage Temperature Range
P_D
T_J, T_STG
44.6
2
-55 ~ 150
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient (PCB
mount) ³
R_θJA
62.5
Maximum Thermal Resistance Junction-Case
R_θJC
2.8

Source
Unit
V
V
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
07-Mar-2013 Rev. E
Any changes of specification will not be informed individually.
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