SMG5403 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG5403
-2.6A , -30V , R_DS(ON) 115 mΩ
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. _Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V VGS=0, ID= -250µA
Gate-Threshold Voltage
VGS(th)
-0.5
-
-1.4
V VDS=VGS, ID= -250µA
Forward Transconductance
gFS
-
5
-
S VDS= -5V,,ID = -2.5A
Gate-Body Leakage Current
IGSS
-
-
±100
nA VGS=±12V
TJ=25°C
-
-
-1
VDS= -30V, VGS=0
Drain-Source Leakage Current
IDSS
µA
TJ=70°C
-
-
-25
VDS= -24V, VGS=0
Drain-Source On-Resistance ²
-
RDS(ON)
-
-
115
VGS= -10V, ID= -2.6A
-
150
mΩ VGS= -4.5V, ID= -2A
Total Gate Charge²
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
-
200
VGS= -2.5V, ID= -1A
-
4.5
-
-
0.8
-
-
1.34
-
VDS= -15V,
nC VGS= -4.5V,
ID= -2.5A
-
5.4
-
VDS= -15V,
-
4.6
-
VGS= -10V,
nS RG=3.3Ω,
-
31
-
RD=4.6Ω,
-
8
-
ID= -1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
415
-
VGS=0
Coss
-
55
-
pF VDS= -25V,
Crss
-
42
-
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage ²
VSD
-
-
-1.2
V IS= -1.2A, VGS=0
Reverse Recovery Time
Reverse Recovery Charge
Trr
-
16.2
-
nS _{IS= -2.5A, VGS=0}
Qrr
-
9
-
nC ^{dl/dt=100A/µS}
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on 1 in² copper pad of FR4 board; 270°C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
17-Sep-2012 Rev. A
Any changes of specification will not be informed individually.
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