SMG5403 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG5403
-2.6A , -30V , R_DS(ON) 115 mΩ
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5403 uses advanced trench technology to
provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM
applications.
FEATURES
Lower Gate Threshold Voltage
Small Package Outline
MARKING
5403
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
SC-59
A
L
3
Top View
CB
1
2
K
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
1
3
2
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ³
Pulsed Drain Current ¹
Power Dissipation
Linear Derating Factor
VDS
VGS
TA=25°C
ID
TA=70°C
IDM
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient ³
RθJA
Ratings
-30
±12
-2.6
-2.2
-10
1.38
0.01
-55~150
90
Unit
V
V
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
17-Sep-2012 Rev. A
Any changes of specification will not be informed individually.
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