SMG2392N_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2392N
0.6A, 150V, R_DS(ON) 2.6Ω
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
VGS(th)
1
-
-
V VDS=VGS, ID=250µA
Gate-Body Leakage
IGSS
-
-
±100
nA VDS=0, VGS=±20V
Zero Gate Voltage Drain Current
On-State Drain Current ¹
-
-
1
VDS=120V, VGS=0
IDSS
µA
-
-
25
VDS=120V, VGS= 0, TJ= 55°C
ID(on)
1
-
-
A VDS=5V, VGS=10V
Drain-Source On-Resistance ¹
Forward Transconductance ¹
-
RDS(ON)
-
gfs
-
-
2.6
-
2.8
15
-
VGS=10V, ID=0.48A
Ω
VGS=5.5V, ID=0.4A
S VDS=15V, ID=0.48A
Diode Forward Voltage
VSD
-
0.81
-
Dynamic ²
V IS=0.9A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
4
-
Qgs
-
1.1
-
nC ^{VDS=75V, VGS=5.5V,}
ID=0.48A
Qgd
-
2.2
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
169
-
VDS=15V,
Coss
-
15
-
pF ^VGS=0,
Crss
-
12
-
f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
4
-
VDD=75V,
Tr
-
5
-
VGEN=10V,
nS R_L=156.3Ω,
Td(off)
-
16
-
RGEN=6Ω
Tf
-
8
-
ID=0.48A
Notes:
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
21-May-2013 Rev. A
Any changes of specification will not be informed individually.
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