SMG2392N_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2392N
0.6A, 150V, R_DS(ON) 2.6Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low R_DS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are
FEATURES
Low R_DS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper lead frame SC-59
saves board space.
Fast switching speed.
High performance trench technology.
Application
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7’ inch
SC-59
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
1
3
2
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipation ¹
TA=25°C
PD
TA=70°C
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient ¹
t ≦10sec
Steady State
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
R_θJA
http://www.SeCoSGmbH.com/
21-May-2013 Rev. A
Ratings
150
±20
0.6
0.4
10
1.7
1.3
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
W
W
°C
°C / W
Any changes of specification will not be informed individually.
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