SMG2391P Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – -0.9A , -150V , RDS(ON) 1.2
P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2391P
-0.9A , -150V , R_DS(ON) 1.2 Ω
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Static
Teat Conditions
On-State Drain Current
ID(on)
-0.5
-
-
A VDS= -5V,VGS= -10V
Gate-Source Threshold Voltage
Gate-Body Leakage Current
VGS(th)
-1
IGSS
-
-
-
V VDS=VGS, ID= -250uA
-
±100
nA VDS=0,VGS= ±20V
Drain-Source Leakage Current
-
-
-1
VDS= -120V, VGS=0
IDSS
µA
-
-
-10
VDS= -120V, VGS=0,TJ =55°C
Drain-Source On-Resistance
-
RDS(ON)
-
-
1.2
VGS= -10V, ID= -0.8A
Ω
-
1.3
VGS= -4.5V, ID= -0.7A
Forward Transconductance
gfs
-
2.2
-
S VDS= -15V, ID= -0.5A
Diode Forward Voltage
VSD
-
-0.8
-
V IS= -0.75A, VGS=0
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
3.4
-
VDS= -75V,
Qgs
-
1.3
-
nC VGS= -4.5V,
Qgd
-
1.6
-
ID= -0.8A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
3
-
VDD= -75V,
Tr
-
10
-
VGEN= -10V,
nS RGEN=6Ω,
Td(off)
-
15
-
RL=93.8Ω,
Tf
-
11
-
ID= -0.8A
Input Capacitance
Ciss
-
334
-
Output Capacitance
Coss
-
41
-
Reverse Transfer Capacitance
Crss
-
23
-
Notes:
1. Pulse test : PW≦300µs, duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
VDS= -15V,
pF VGS=0,
f=1.0MHz
http://www.SeCoSGmbH.com/
27-Oct-2011 Rev. A
Any changes of specification will not be informed individually.
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