SMG2391P Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – -0.9A , -150V , RDS(ON) 1.2
P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2391P
-0.9A , -150V , R_DS(ON) 1.2 Ω
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
FEATURES
Low R_DS(on) trench technology
Low thermal impedance
Fast switching speed
APPLICATIONS
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
2.70 3.10 G
0.10 REF.
2.25 3.00 H
0.40 REF.
1.30 1.70 J 0.10 0.20
1.00 1.40 K 0.45 0.55
1.70 _TO2.3_P0 _VIL_EW0.85 1.15
0.35 0.50
1
3
2
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
Pulsed Drain Current ²
TA=25°C
ID
TA=70°C
IDM
Power Dissipation¹
TA=25°C
PD
TA=70°C
Continuous Source Current (Diode Conduction) ¹
IS
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient ¹
Notes:
1. Surface mounted on 1”x1” FR4 board.
2. Pulse width limited by Max. junction temperature.
t<= 10sec
Steady State
RθJA
Ratings
-150
±20
-0.9
-0.8
5
1.3
0.8
1.5
-55~150
100
166
Unit
V
V
A
A
W
A
°C
°C / W
http://www.SeCoSGmbH.com/
27-Oct-2011 Rev. A
Any changes of specification will not be informed individually.
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