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| SMG2359P_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2359P
-1.7A , -60V , RDS(ON) 381 mï
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Zero Gate Voltage Drain Current
Static
-
-
-1
VDS = -48V, VGS=0
IDSS
μA
-
-
-10
VDS = -48V, VGS=0, TJ=55°C
Gate-Body Leakage
IGSS
-
-
±100 nA VDS =0, VGS= ±20V
Gate-Threshold Voltage
On-State Drain Current 1
VGS(th)
ID(ON)
-1 -2.1 -3.5
-8
-
-
V VDS =VGS, ID = -250μA
A VDS = -5V, VGS= -10V
Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
gFS
-
300 381
VGS= -10V, ID = -1.6A
mâ¦
-
450 561
VGS= -4.5V, ID = -1.3A
-
8
-
S VDS= -15V,,ID = -1.6A
Diode Forward Voltage
VSD
-
-
-1.2
V IS= -2.5A, VGS=0
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
18
-
ID= -1.6A
Qgs
-
5
-
nC VDS= -30V
Qgd
-
2
-
VGS= -4.5V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Td(ON)
Tr
Td(OFF)
Tf
-
8
-
-
10
-
-
35
-
-
12
-
VDD= -30V
VGEN= -10V
nS RG=6â¦
ID= -1A
RL=30â¦
Notes:
1. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
08-Nov-2012 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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