SMG2359P_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2359P
-1.7A , -60V , R_DS(ON) 381 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize
high cell density process. Low R_DS(on) assures minimal
power loss and conserves energy, making this
device ideal for use in power management circuitry.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Fast Switch.
 Low Gate Charge.
 Miniature SC-59 Surface Mount Package Saves
Board Space.
APPLICATION
Voltage control small signal switch, power management
in portable and battery-powered products such as computer
portable electronics and other battery power application.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7’ inch
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
1
3
2
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
T_A=25°C
T_A=70°C
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
T_A=25°C
T_A=70°C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
Thermal Resistance Data
Maximum Junction to Ambient ¹
t≦5 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R_θJA
Ratings
-60
±20
-1.7
-1.4
±15
-1.7
1.3
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
08-Nov-2012 Rev. B
Any changes of specification will not be informed individually.
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