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| SMG2359P Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2359P
-1.6 A, -60 V, RDS(ON) 0.381 ï
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current A
Drain-Source Breakdown Voltage
Drain-Source On-Resistance A
Forward Transconductance A
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBO MIN TYP MAX UNIT TEST CONDITIONS
Static
VGS(th)
IGSS
IDSS
-1 -2.1 -3.5
-
- ±100
-
-
-1
-
- -10
ID(ON)
VBR(DSS)
RDS(ON)
-8
-
-
-60 -
-
- 300 381
- 450 561
gFS
-
8
-
VSD
-
- -1.2
Dynamic b
Qg
Qgs
Qgd
Td(ON)
-
18
-
-
5
-
-
2
-
-
8
-
Tr
-
10
-
Td(OFF)
-
35
-
Tf
-
12
-
V VDS = VGS, ID = -250μA
nA VDS = 0V, VGS= ±20V
VDS = -48V, VGS= 0V
μA
VDS = -48V, VGS= 0V, TJ=55°C
A VDS = -5V, VGS= -10V
V VGS = 0, ID = -1mA
VGS= -10V, ID = -1.6A
mâ¦
VGS= -4.5V, ID = -1.3A
S VDS= -15V,,ID = -1.6A
V IS= -2.5A, VGS=0V
ID= -1.6A
nC VDS= -30V
VGS= -4.5V
ID= -1A, VDD= -30V
VGEN= -10V
nS
RG= 6â¦
RL= 30â¦
Notes
a. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
22-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
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