SMG2359P Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2359P
-1.6 A, -60 V, R_DS(ON) 0.381 
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell density trench process
To provide low R_DS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SC-59 saves board
space.
 Fast switching speed.
 High performance trench technology.
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
PRODUCT SUMMARY
PRODUCT SUMMARY
V_DS(V)
-60
R_DS(on) (
0.381@V_GS= -10V
0.561@V_GS= -4.5V
I_D(A)
-1.6
-1.3

Gate

Drain
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15

Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^A
Pulsed Drain Current ^B
T_A=25°C
T_A=70°C
Continuous Source Current (Diode Conduction) ^A
Power Dissipation ^A
T_A=25°C
T_A=70°C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
THERMAL RESISTANCE DATA
Maximum Junction to Ambient ^A
t≦5 sec
Steady-State
R_θJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
RATING
-60
±20
1.7
1.4
±15
-1.7
1.3
0.8
-55 ~ 150
100
166
UNIT
V
V
A
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
22-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
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