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| SMG2334NE Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2334NE
3.5 A, 30 V, RDS(ON) 60 mï
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current A
Drain-Source On-Resistance A
Forward Transconductance A
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Static
VGS(th)
IGSS
IDSS
0.6 -
-
-
-
-
-
-
ID(ON)
RDS(ON)
6
-
-
-
-
-
gFS
- 6.9
VSD
- 0.8
Dynamic b
Qg
Qgs
Qgd
Td(ON)
- 6.3
- 0.9
- 1.9
-
16
Tr
-
5
Td(OFF)
-
23
Tf
-
3
-
±100
1
25
-
60
82
-
-
-
-
-
-
-
-
-
V VDS = VGS, ID = 250μA
nA VDS = 0V, VGS= 4V
VDS = 24V, VGS= 0V
μA
VDS = 24V, VGS= 0V, TJ=55°C
A VDS = 5V, VGS= 4.5V
VGS= 4.5V, ID = 3.5A
mâ¦
VGS= 2.5V, ID = 3A
S VDS= 15V,,ID = 3.5A
V IS= 2.3A, VGS= 0V
ID= 3.5A
nC VDS= 15V
VGS= 2.5V
ID= 1A, VDD= 25V
nS VGEN= 10V
RL= 25â¦
Notes
a. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
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