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SMG2334NE Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET
Elektronische Bauelemente
SMG2334NE
3.5 A, 30 V, RDS(ON) 60 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process
to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
FEATURES
 Low RDS(on) provides higher efficiency and extends battery life.
K
 Low thermal impedance copper leadframe SC-59 saves board
space.
 Fast switching speed.
F
 High performance trench technology.
SC-59
A
L
3
Top View
CB
1
1
2
E
D
G
H
3
2
J
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
30
RDS(on) (
60@VGS= 4.5V
82@VGS= 2.5V
ID(A)
3.5
3.0

Gate

Drain
ESD
Protection
Diode
2KV

Source
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
±12
V
Continuous Drain Current A
TA=25°C
TA=70°C
ID
3.5
2.8
A
Pulsed Drain Current B
IDM
16
A
Continuous Source Current (Diode Conduction) A
IS
1.25
A
Power Dissipation A
TA=25°C
TA=70°C
PD
1.3
0.8
W
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
THERMAL RESISTANCE DATA
Maximum Junction to Ambient A
t≦10 sec
Steady-State
RθJA
100
166
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
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