SMG2334N Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2334N
3.5A, 30V, R_DS(ON) 60m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V_GS(th)
I_GSS
I_DSS
0.6 -
-
-
-
-
-
-
On-State Drain Current ¹
Drain-Source On-Resistance ¹
I_D(ON)
R_DS(ON)
6
-
-
-
-
-
Forward Transconductance ¹
Diode Forward Voltage
g_FS
- 6.9
V_SD
- 0.8
Dynamic ²
Total Gate Charge
Q_g
- 6.3
Gate-Source Charge
Q_gs
- 0.9
Gate-Drain Charge
Q_gd
- 1.9
Turn-On Delay Time
Td_(ON)
-
16
Rise Time
T_r
-
5
Turn-Off Delay Time
Td_(OFF)
-
23
Fall Time
T_f
-
3
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
-
±100
1
25
-
60
82
-
-
-
-
-
-
-
-
-
V ^VDS^=VGS^{, I}D^=250μA
nA ^VDS^{=0, V}GS^=12V
μA ^{VDS=24V, VGS=0}
V_DS=24V, V_GS=0, T_J=55°C
A ^VDS^{=5V, V}GS^=4.5V
mΩ ^{VGS=4.5V, ID=3.5A}
V_GS=2.5V, I_D=3A
S ^VDS^=15V,,^ID^=3.5A
V ^IS^{=2.3A, V}GS⁼⁰
I_D=3.5A
nC V_DS=15V
V_GS=2.5V
I_D=1A, V_DD=25V
nS V_GEN=10V
R_L=25Ω
http://www.SeCoSGmbH.com/
16-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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