SMG2334N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2334N
3.5A, 30V, R_DS(ON) 60m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R_DS(on) and
to ensure minimal power loss and heat dissipation.
FEATURES
 Low R_DS(on) provides higher efficiency and
extends battery life.
 Low thermal impedance copper leadframe
SC-59 saves board space.
 Fast switching speed.
 High performance trench technology.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15

Drain
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
T_A=25°C
T_A=70°C
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
T_A=25°C
T_A=70°C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
Thermal Resistance Ratings
Maximum Junction to Ambient ¹
t≦10 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
R_θJA
http://www.SeCoSGmbH.com/
16-Mar-2011 Rev. A

Gate

Source
Ratings
30
±12
3.5
2.8
16
1.25
1.3
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
W
°C
°C/W
Any changes of specification will not be informed individually.
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