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| SMG2328_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SMG2328
100V, 1.5A, 250mâ¦
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Drain-Source Breakdown Voltage
BVDSS
100
-
-
V VGS=0V, ID =250μA
Gate Threshold Voltage
VGS(th)
1
-
2.5
V VDS= VGS, ID =250μA
Forward Tranconductance
gfs
-
4
-
S VDS=15V, ID =1.5A
Gate-Source Leakage Current
IGSS
-
-
±100
nA VGS=±20V
Drain-Source Leakage
Current(TJ=25°C)
Drain-Source Leakage
Current(TJ=55°C)
-
-
1
μA VDS=80V, VGS=0V
IDSS
-
-
10
μA VDS=80V, VGS=0V
Drain-Source On-State Resistance RDS(ON)
-
-
250
m⦠VGS=10V, ID=1.5A
Total Gate Charge 2
Qg
-
11.1
-
Gate-Source Chagre
Qgs
-
4.4
-
nC VDS=80V, ID =1.5A, VGS=5V
Gate-Drain (âMillerâ) Change
Turn-on Delay Time 2
Qgd
-
3
-
Td(ON)
-
9
-
Rise Time
Turn-off Delay Time
Tr
-
9.4
-
Td(OFF)
-
26.8
-
nS
VDD=30V, VGS=10V
I D=1A, RL=30â¦, RG=6â¦
Fall Time
Tf
-
2.6
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
-
975
-
-
38
-
-
27
-
VDS=25V
pF VGS=0V
f=1MHz
SOURCE-DRAIN DIODE
Forward On Voltage 2
VSD
-
-
1.2
V IS=1.0A, VGS=0V
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width ⦠300 μs, duty cycle ⦠2ï¼
.
3. Surface mounted on 1 in2 copper pad of FR4 boardï¼270 °C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
21-Nov-2013 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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