SMG2328_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SMG2328
100V, 1.5A, 250mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMG2328 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient
and cost-effectiveness device. The SMG2328 is universally
used for all commercial-industrial applications.
FEATURES
 Simple drive requirement
 Small package outline
 Super high density cell design for extremely
low R_DS(ON)
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
DEVICE MARKING:
D
2328
G
S
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15



MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current ³
Pulsed Drain Current ^1.2
T_A=25°C
T_A=70°C
Total Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature
Range
Thermal Resistance Junction-ambient ³ (Max.)
V_DSS
V_GSS
I_D
I_D
I_DM
P_D
T_J, T_STG
THERMAL DATA
R_θJA
RATING
100
±20
1.5
1.2
5
1.38
0.008
-55~150
125
UNIT
V
V
A
A
A
W
W / °C
°C
°C / W
http://www.SeCoSGmbH.com/
21-Nov-2013 Rev. B
Any changes of specification will not be informed individually.
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