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| SMG2327P Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2327P
-3.6 A, -20 V, RDS(ON) 52 mï
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gFS
VSD
-0.7
-
-
-
-
-
-
-
-10
-
-
-
-
-
-
-
-
12
- -0.60
Dynamic 2
-
±100
-1
-10
-
0.052
0.072
0.120
-
-
V VDS = VGS, ID = -250μA
nA VDS =0, VGS= ±8V
μA VDS = -16V, VGS=0
VDS = -16V, VGS=0, TJ=55°C
A VDS = -5V, VGS= -4.5V
VGS= -4.5V, ID = -3.6A
⦠VGS= -2.5V, ID = -3.1A
VGS= -1.8V, ID = -2.7A
S VDS= -5V,,ID = -1.25A
V IS= -0.46A, VGS=0
Total Gate Charge
Qg
-
12
-
Gate-Source Charge
Qgs
-
2
-
Gate-Drain Charge
Qgd
-
2
-
Input Capacitance
CISS
- 1312 -
Output Capacitance
COSS
-
130
-
Reverse Transfer Capacitance
CRSS
-
106
-
Turn-On Delay Time
Td(ON)
-
6.5
-
Rise Time
Tr
-
20
-
Turn-Off Delay Time
Td(OFF)
-
31
-
Fall Time
Tf
-
21
-
Notes
1 Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
ID= -2.4A
nC VDS= -5V
VGS= -4.5V
VDS=-15V,
pF VGS=0V,
f=1MHz
VDD= -10V
nS
VGEN= -4.5V
RG= 6â¦
IL= -1A
http://www.SeCoSGmbH.com/
01-Aug-2012 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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