SMG2327P Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2327P
-3.6 A, -20 V, R_DS(ON) 52 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize high
cell density process.Low R_DS(on) assures minimal power
loss and conserves energy, making this device ideal for
use in power management circuitry.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Miniature SC-59 surface mount package saves
board space.
 Fast switching speed.
 High performance trench technology.
APPLICATION
DC-DC converters, power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15



ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ¹
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ²
I_DM
Continuous Source Current (Diode Conduction) ¹
I_S
Power Dissipation ¹
T_A=25°C
T_A=70°C
P_D
Operating Junction and Storage Temperature Range
T_J, T_STG
Thermal Resistance Ratings
Maximum Junction to Ambient ¹
t≦5 sec
R_θJA
Steady-State
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings
-20
±8
-3.6
-1.8
-10
±0.46
1.25
0.8
-55 ~ 150
100
150
Unit
V
V
A
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
01-Aug-2012 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4