SMG2326N_15 Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2326N
2.2 A, 20 V, R_DS(ON) 70 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test conditions
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ^A
Drain-Source On-Resistance ^A
Forward Transconductance ^A
Diode Forward Voltage
Static
V_GS(th)
0.7
-
-
V ^VDS^=VGS^{, I}D^=250μA
I_GSS
-
-
1
μA ^VDS^{=0, V}GS^=12V
I_DSS
-
-
0.1
μA ^{VDS=16V, VGS=0}
-
-
1
V_DS=16V, V_GS=0, T_J=55°C
I_D(ON)
5
-
-
A ^VDS^{=5V, V}GS^=4.5V
-
-
70
V_GS=4.5V, I_D=2.2A
R_DS(ON)
-
-
80
mΩ V_GS=2.5V, I_D=2A
-
-
120
V_GS=1.8V, I_D=1.8A
g_FS
-
11
-
V_SD
-
0.6
-
Dynamic ²
S ^VDS^=5V,,^ID^=2A
V ^IS^{=0.6A, V}GS⁼⁰
Total Gate Charge
Q_g
-
4.5
-
Gate-Source Charge
Q_gs
-
0.89
-
Gate-Drain Charge
Q_gd
-
0.95
-
Turn-On Delay Time
Td_(ON)
-
6
-
Rise Time
T_r
-
6.5
-
Turn-Off Delay Time
Td_(OFF)
-
14
-
Fall Time
T_f
-
2
-
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
I_D=2A
nC V_DS=10V
V_GS=4.5V
I_D=1A, V_DD=10V
nS V_GS=4.5V
R_G=6Ω
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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