SMG2326N_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2326N
2.2 A, 20 V, R_DS(ON) 70 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High
Cell Density process. Low R_DS(on) assures minimal power
loss and conserves energy, making this device ideal for use
in power management circuitry.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Miniature SC-59 surface mount Package saves
board space.
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
Application
DC-DC converters, power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
1.00
Max.
3.10
3.00
1.70
1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15



ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain Current ¹
T_A=25°C
2.2
I_D
T_A=70°C
1.8
Pulsed Drain Current ²
I_DM
8
Continuous Source Current (Diode Conduction) ¹
I_S
0.6
Power Dissipation ¹
T_A=25°C
T_A=70°C
Operating Junction and Storage Temperature Range
P_D
T_J, T_STG
1.25
0.8
-55 ~ 150
Thermal Resistance Ratings
Maximum Junction to Ambient ¹
t≦5 sec
R_θJA
100
Steady-State
166
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Unit
V
V
A
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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