SMG2325 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2325
0.45A , 250V , R_DS(ON) 1.7Ω
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
BVDSS
VGS(th)
IGSS
250
1.5
-
-
-
V VGS=0, ID=250µA
-
3.5
V VDS=VGS, ID=250µA
-
±100
nA VGS=±20V
Drain-Source Leakage Current
IDSS
-
-
1
µA VDS=250V, VGS=0
Drain-Source On-Resistance ¹
Diode Forward Voltage¹
-
RDS(ON)
-
VSD
-
-
1.7
VGS=10V, ID=0.45A
Ω
-
1.9
VGS=4.5V, ID=0.35A
-
1.2
V IS=0.45A, VGS=0
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain (‘‘Miller’’) Charge
Turn-on Delay Time¹
Rise Time
Turn-off Delay Time
Fall Time
Dynamic
Qg
-
30
-
VDS=200V,VGS=10V, ID=0.45A
Qg
-
17
-
nC ^VDS=200V,
Qgs
-
3
-
VGS=4.5V,
Qgd
-
12
-
ID=0.45A
Td(on)
-
19
-
VDD=125V,
Tr
-
4
-
VGS=10V,
nS RG=6Ω,
Td(off)
-
48
-
RL=125Ω,
Tf
-
13
-
ID=0.45A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
1170
-
VGS=0,
Coss
-
36
-
pF VDS=15V,
Crss
-
10
-
f=1.0MHz
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ;270°C /W when mounted on min. copper pad.
2. The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%
3. The power dissipation is limited by 150°C juncti on temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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