SMG2325 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2325
0.45A , 250V , R_DS(ON) 1.7Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG2325 is the N-Channel logic enhancement
mode power filed effect transistors are produced using
high Cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
Resistance
FEATURES
Simple Drive Requirement
Small Package Outline
MARKING
2325
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹, VGS@10V
Pulsed Drain Current ²
Power Dissipation ³
TA=25°C
ID
TA=70°C
IDM
TA=25°C
PD
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient ¹
RθJA
Ratings
250
±20
0.45
0.35
1.4
0.8
-55~150
156
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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