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| SMG2317P Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET | |||
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Elektronische Bauelemente
SMG2317P
-0.9 A, -30 V, RDS(ON) 300 mï
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Switch Off Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
-30
-
-
V VDS= 0V, ID= -250uA
Gate-Body Leakage
IGSS
-
-
±100 nA VDS= 0V, VGS= ±20V
Zero Gate Voltage Drain Current
-
-
-1
VDS= -24V, VGS= 0V
IDSS
μA
-
-
-10
VDS= -24V, VGS= 0V, TJ= 55°C
Switch On Characteristics
Gate-Threshold Voltage
On-State Drain Current 1
VGS(th)
-0.8
-1.7
-2.6
ID(on)
-2
-
-
V VDS=VGS, ID= -250uA
A VDS = -5V, VGS= -4.5V
Drain-Source On-Resistance 1
-
250 300
VGS= -10V, ID= -1A
RDS(ON)
-
530 660 m⦠VGS= -4.5V, ID= -0.9A,TJ= 55°C
Forward Transconductance 1
-
450 500
VGS= -4.5V, ID= -0.9A
gfs
-
2
-
S VDS= -5V, ID= -1.1A
Diode Forward Voltage
VSD
-
-0.7 -1.2
V IS= -0.4A, VGS= 0V
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
2
3
Qgs
-
0.5
-
nC
VDS= -10V, VGS= -5V,
ID= -0.9A
Qgd
-
1.1
-
Turn-on Delay Time
Switching
Td(on)
-
8
16
Rise Time
Turn-off Delay Time
Tr
Td(off)
-
-
16
36
32
93
nS
VDS= -10V, VGEN= -10V,
RG= 50ï, ID= -0.9A
Fall Time
Tf
-
Notes:
1
2
Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
Guaranteed by design, not subject to production testing.
33
94
http://www.SeCoSGmbH.com/
05-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 5
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