SMG2317P Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2317P
-0.9 A, -30 V, R_DS(ON) 300 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density process. Low R_DS(on) assures minimal power loss
and conserves energy, making this device ideal for use in power
management circuitry. Typical applications are lower voltage
application, power management in portable and battery-powered
products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Low Gate Charge
 Fast switch.
 Miniature SC-59 surface mount package saves
board space.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
1.00
Max.
3.10
3.00
1.70
1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
1
3
2
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
Operating Junction and Storage Temperature Range
I_D @ T_A=25°C
I_D @ T_A=70°C
P_D @ T_A=25°C
P_D @ T_A=70°C
V_DS
V_GS
I_D
I_DM
I_S
P_D
Tj, Tstg
Thermal Resistance Data
Maximum Junction to Ambient ¹
t ≦ 5 sec
Steady State
R_JA
Notes:
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
Ratings
-30
±20
-0.9
-0.75
-10
0.4
0.5
0.42
-55 ~ 150
250
285
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
05-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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