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| SMG2314NE_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET | |||
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Elektronische Bauelemente
SMG2314NE
5.3 A, 20 V, RDS(ON) 32 mï
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
VGS(th)
0.4
-
-
V VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS
-
-
±10
nA VDS=0, VGS= ±12V
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
-
-
1
uA VDS=16V, VGS=0
-
-
25
VDS=16V, VGS=0, TJ= 55°C
ID(on)
10
-
-
A VDS =5V, VGS=4.5V
Drain-Source On-Resistance 1
Forward Transconductance 1
-
RDS(ON)
-
gfs
-
-
32
m⦠VGS=4.5V, ID=4.2A
-
44
VGS=2.5V, ID=3.8A
11
-
S VDS=15V, ID= 4.2A
Diode Forward Voltage
VSD
-
0.7
-
Dynamic 2
V IS=0.9A, VGS=0
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
413
-
VDS= 10V,
Coss
-
76
-
pF VGS= 4.5V,
Crss
-
67
-
f=1MHz.
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
6.2
-
VDS= 10V,
Qgs
-
1
-
nC VGS= 4.5V,
Qgd
-
2
-
ID= 4.2A.
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
6
-
VDS= 10V,
Tr
-
19
-
VGEN= 4.5V,
nS RGEN=6â¦,
Td(off)
-
47
-
RL=2.4â¦,
Tf
-
67
-
ID=4.2A.
Notes
1 Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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