SMG2314NE_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente
SMG2314NE
5.3 A, 20 V, R_DS(ON) 32 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell
Density process. Low R_DS(on) assures minimal power loss and
conserves energy, making this device ideal for use in power
management circuitry. Typical applications are PWMDC-DC
converters, power management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones power system.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Miniature SC-59 surface mount package saves
board space.
 High power and current handling capability.
 MLow side high current DC-DC Converter applications
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
1.00
Max.
3.10
3.00
1.70
1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7’ inch
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
T_A=25°C
T_A=70°C
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
T_A=25°C
T_A=70°C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_STG
20
±12
5.3
4.1
20
1.8
1.3
0.8
-55 ~ 150
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient ¹
t ≦ 10 sec
Steady State
R_JA
100
166
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
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