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| SMG2314NE Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET | |||
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Elektronische Bauelemente
SMG2314NE
4 A, 20 V, RDS(ON) 32 mï
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
VGS(th)
0.7
-
-
V VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS
-
-
±100 nA VDS= 0V, VGS= ±8V
Zero Gate Voltage Drain Current
On-State Drain Current 1
-
-
1
VDS= 16V, VGS= 0V
IDSS
uA
-
-
10
VDS= 16V, VGS= 0V, TJ= 55°C
ID(on)
10
-
-
A VDS = 5V, VGS= 4.5V
Drain-Source On-Resistance 1
Forward Transconductance 1
-
RDS(ON)
-
-
32
VGS= 4.5V, ID= 4.6A
mâ¦
-
44
VGS= 2.5V, ID= 3.9A
gfs
-
11.3
-
S VDS= 10V, ID= 4.0A
Diode Forward Voltage
VSD
-
0.75
-
Dynamic 2
V IS= 1.6A, VGS= 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
13.4
-
Qgs
-
0.9
-
nC
VDS= 10V, VGS= 4.5V,
ID= 4.0A
Qgd
-
2.0
-
Turn-on Delay Time
Td(on)
-
8
-
Rise Time
Turn-off Delay Time
Tr
-
24
-
VDD= 10V, VGEN= 4.5V,
Td(off)
-
35
-
RL= 15ï, ID= 1A
nS
Fall Time
Tf
-
10
-
Source-Ddrain Reverse
Recovery Time
Trr
-
40
-
IF=1.6A, di/dt =100 A/uS
Notes
1
2
Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
27-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2
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