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SMG2314NE Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
SMG2314NE
4 A, 20 V, RDS(ON) 32 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell
Density process. Low RDS(on) assures minimal power loss and
conserves energy, making this device ideal for use in power
management circuitry. Typical applications are PWMDC-DC
converters, power management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones power system.
FEATURES
 Low RDS(on) provides higher efficiency and extends
battery life.
 Miniature SC-59 surface mount package saves
board space.
 High power and current handling capability.
 MLow side high current DC-DC Converter applications
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
ID @ TA=25°C
ID @ TA=70°C
PD @ TA=25°C
PD @ TA=70°C
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Ratings
Maximum
20
±12
4.0
3.1
±20
1.6
1.3
0.8
-55 ~ 150
Unit
V
V
A
A
A
A
W
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction to Ambient 1
Notes
t ≦ 5 sec
Steady State
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
RJA
Maximum
100
166
Unit
°C / W
http://www.SeCoSGmbH.com/
27-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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