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| SMG2310N_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET | |||
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Elektronische Bauelemente
SMG2310N
2.2A, 30V, RDS(ON) 65 mï
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Switch Off Characteristics
Drain-Source Breakdown Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
30
IGSS
-
-
IDSS
-
-
-
VGS=0, ID=250μA
-
±100 nA VDS=0, VGS= ±8V
-
1
μA VDS=24V, VGS=0
-
10
VDS=24V, VGS=0, TJ=55°C
Switch On Characteristics
Gate-Threshold Voltage
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS(th)
0.43
0.7
1
ID(on)
10
-
-
-
54
65
RDS(ON)
-
-
80
99
70
82
gfs
-
13
-
VSD
-
0.65 1.2
Dynamic 2
Qg
-
7
9
Qgs
-
1.1
-
Qgd
-
1.9
-
V VDS=VGS, ID=250μA
A VDS=5V, VGS=4.5V
VGS=4.5V, ID=2.2A
m⦠VGS=4.5V, ID=2.2A, TJ=55°C
VGS=2.5V, ID=2A
S VDS=5V, ID=2.2A
V IS=0.45A, VGS=0
nC
VDS=10V, VGS=4.5V,
ID= 2.2A
Switching
Turn-on Delay Time
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Notes:
1 Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
4
11
11
18
19
30
nS
VDS=10V, VGEN=4.5V,
RG=6ï, ID=1A
5
10
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
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