SMG2310N_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2310N
2.2A, 30V, R_DS(ON) 65 m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell
Density process. Low R_DS(on) assures minimal power loss and
conserves energy, making this device ideal for use in power
management circuitry. Typical applications are lower voltage
application, power management in portable and battery-powered
products such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Low gate charge
 Fast switch
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
Operating Junction and Storage Temperature Range
I_D @ T_A=25°C
I_D @ T_A=70°C
P_D @ T_A=25°C
P_D @ T_A=70°C
V_DS
V_GS
I_D
I_DM
I_S
P_D
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient ¹
t ≦ 5 sec
Steady State
Notes:
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
R_JA
Rating
30
±8
2.2
1.7
10
0.45
0.5
0.42
-55 ~ 150
250
285
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4