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SMG2310B Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET
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Elektronische Bauelemente
SMG2310B
2.3A , 60V , RDS(ON) 100 m
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Gate-Threshold Voltage
Forward Transconductance
Gate-Body Leakage Current
Drain-Source Leakage
Current
TJ=25°C
TJ=55°C
BVDSS
△BVDSS/△Tj
VGS(th)
gfs
IGSS
IDSS
Drain-Source On-Resistance
RDS(ON)
Total Gate Charge 2
Gate-Source Charge
Gate-Drain (‘’Miller’’)Charge
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
60
-
-
V VGS=0, ID=250μA
-
0.054
-
V/°C Reference to 25°C, ID=1mA
1
-
2.5
V VDS=VGS, ID=250μA
-
13
-
S VDS =5V, ID =2A
-
-
±100
nA VGS=±20V
-
-
1
μA VDS=48V, VGS=0
-
-
5
VDS=48V, VGS=0
-
-
100
mΩ VGS=10V, ID=2.3A
-
-
110
VGS=4.5V, ID=2.2A
-
5
-
-
1.68
-
-
1.9
-
VDS=48V,
nC VGS=4.5V,
ID=2A
-
1.6
-
-
7.2
-
-
25
-
-
14.4
-
VDS=30V,
VGS=10V,
nS RG=3.3Ω,
RD=30Ω,
ID=2A
-
511
-
-
38
-
-
25
-
VGS=0,
pF VDS=15V,
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage2
Continuous Source Current1.4
Pulsed Source Current2.4
VSD
-
-
1.2
V IS=1A, VGS=0
IS
-
-
2.3
A VG=VD=0, Force Current
ISM
-
-
9.2
Reverse Recovery Time
Reverse Recovery Charge
TRR
-
9.7
-
nS IF=2A, dI/dt=100A/μs
QRR
-
5.8
-
nC VGS=0
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ;270°C / W when mounted on min. copper pad.
2. The data tested by pulsed , pulse width≦300μs, duty cycle≦2%
3. The power dissipation is limited by 150 °C junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation
http://www.SeCoSGmbH.com/
30-Jul-2013 Rev. B
Any changes of specification will not be informed individually.
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