SMG2310B Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2310B
2.3A , 60V , R_DS(ON) 100 m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG2310B utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SMG2310B is universally used for all commercial-industrial
applications.
FEATURES
 Simple Drive Requirement
 Small Package Outline
MARKING
2310B
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ¹ , V_GS@10V
T_A=25°C
I_D
T_A=70°C
Pulsed Drain Current ²
I_DM
Power Dissipation ³
T_A=25°C
P_D
Operating Junction and Storage Temperature Range
T_j, T_stg
Maximum Junction to Ambient ¹
Thermal Resistance Rating
R_θJA
Ratings
60
±20
2.3
1.8
9.2
1
-55~150
125
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
30-Jul-2013 Rev. B
Any changes of specification will not be informed individually.
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