SMG2304 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG2304
2.7A, 25V,RDS(ON) 117m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25 ^oC)
IDSS
Drain-Source Leakage Current (Tj=70^oC)
Static Drain-Source On-Resistance ²
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
25
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.1
_
_
_
_
_
_
5.9
0.8
2.1
4.5
11.5
12
3
110
85
39
3.4
Max.
_
_
3.0
±100
1
10
117
190
10
_
_
_
_
_
_
_
_
_
_
Unit Test Condition
V
VGS=0V, ID=250uA
V/
Reference to 25^oC, ID=1mA
V
VDS=VGS, ID=250uA
nA
VGS=±20V
uA
VDS=25V,VGS=0
uA
VDS=25V,VGS=0
VGS=10V, ID=2.5A
m
VGS=4.5V, ID=2A
ID=2.5A
nC
VDS=15V
VGS=10V
VDS=15V
ID=1A
nS
VGS=10V
RG=6
RD=15
VGS=0V
pF
VDS=15V
f=1.0MHz
S
VDS=4.5V, ID=2.5A
Source-Drain Diode
Parameter
Symbol
Min. Typ.
Max. Unit Test Condition
Forward On Voltage²
VSD
_
_
1.2
V
IS=1.25A ,VGS=0,Tj=25^oC
Continuous Source Current(Body Diode)
Is
_
_
1
A VD=VG=0V,VS=1.2V
Pulsed Source Current(Body Diode)¹
ISM
_
_
10
A
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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