SMG2304 Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG2304
2.7A, 25V,RDS(ON) 117m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
Description
The SMG2304 provides the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
L
3
S
Top View
B
2
1
D
G
Features
C
J
* Reliable And Rugged
H
* Super High Dense Cell Design For Extremely Low RDS(ON)
K
Drain
Applications
Gate
Source
D
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
SC-59
Dim Min Max
A
2.70 3.10
B
1.40 1.60
C
1.00 1.30
D
0.35 0.50
G
1.70 2.10
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
0.85 1.15
S
2.40 2.80
All Dimension in mm
Marking : 2304
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,³ VGS@4.5V
Continuous Drain Current,³ VGS@4.5V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
Ratings
25
±20
2.7
2.2
10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W / ^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient ³
Max.
Symbol
Rthj-a
Ratings
90
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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