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| SMG2302N_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET | |||
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Elektronische Bauelemente
SMG2302N
3.4 A, 20 V, RDS(ON) 76 mï
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
0.7
0.8
1.2
V VDS=VGS, ID=250μA
IGSS
-
-
100
nA VDS=0, VGS=8V
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
-
-
1
μA VDS=16V, VGS=0
-
-
10
VDS=20V, VGS= 0, TJ= 55°C
ID(on)
7
-
-
A VDS=5V, VGS=4.5V
Drain-Source On-Resistance 1
Forward Transconductance 1
-
RDS(ON)
-
gfs
-
-
76
m⦠VGS=4.5V, ID=3.4A
-
103
VGS=2.5V, ID=2.9A
7
-
S VDS=5V, ID=1.5A
Diode Forward Voltage
VSD
-
0.7
-
Dynamic 2
V IS=1.6A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
Td(on)
-
3.5
-
-
0.55
-
-
0.95
-
-
815
-
-
175
-
-
106
-
-
5
-
nC
VDS=10V, VGS=4.5V,
ID=3.4A
VDS=15V, VGS=0,
pF f=1MHz
Rise Time
Turn-off Delay Time
Tr
Td(off)
-
-
8
11
-
-
nS
VDD=10V, VGEN=4.5V,
RL=6ï, RG=6ï
Fall Time
Tf
-
3
-
Notes:
1 Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
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