SMG2302N_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2302N
3.4 A, 20 V, R_DS(ON) 76 m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low R_DS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are
FEATURES
 Low R_DS(on) provides higher efficiency and extends
battery life.
 Low thermal impedance copper lead frame SC-59
saves board space.
 Fast switching speed.
 High performance trench technology.
Application
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
SC-59
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15



ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current ¹
Pulsed Drain Current ²
Continuous Source Current (Diode Conduction) ¹
Power Dissipation ¹
Operating Junction and Storage Temperature Range
I_D @ T_A=25°C
I_D @ T_A=70°C
P_D @ T_A=25°C
P_D @ T_A=70°C
V_GS
I_D
I_DM
I_S
P_D
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient ¹
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
t ≦ 5 sec
Steady State
R_JA
Ratings
20
±8
3.4
2.2
10
1.6
1.25
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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