SMG1333 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG1333
-550mA, -20V,RDS(ON) 800m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 ^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current (Tj=70^oC)
Static Drain-Source On-Resistance²
RDS(ON)
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time ²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
-20
_
-0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.01
_
_
_
_
_
_
_
1.7
0.3
0.4
5
8
10
2
66
25
20
1.0
Max.
_
_
-1.2
±100
-1
-10
600
800
1000
2.7
_
_
_
_
_
_
105.6
_
_
_
Unit Test Condition
V
VGS=0V, ID=-250uA
V/
Reference to 25 ^oC,ID=-1mA
V
VDS=VGS, ID=-250uA
nA
VGS=±12V
uA
VDS=-20V,VGS=0
uA
VDS=-16V,VGS=0
VGS=-10V, ID=-550mA
m
VGS=-4.5V, ID=-500mA
VGS=-2.5V, ID=-300mA
ID=-500mA
nC
VDS=-16V
VGS=-4.5V
VDS=-10V
ID=-500mA
nS
VGS=-5V
RG=3.3
RD=20
VGS=0V
pF
VDS=-10V
f=1.0MHz
S
VDS=-5V, ID=-550mA
Source-Drain Diode
Parameter
Forward On Voltage ²
Symbol
VSD
Min.
_
Typ.
_
Max.
-1.2
Unit
V
Test Condition
IS=-300mA, VGS=0V.
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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