SMG1333 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG1333
-550mA, -20V,RDS(ON) 800m
P-Channel Enhancement Mode Power Mos.FET
Description
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
The SMG1333 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
Features
* Simple Gate Drive
* Small package outline
* Fast switching speed
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
3
S
Top View
B
2
1
D
G
C
H
Drain
Gate
Source
J
K
D
G
SC-59
Dim Min Max
A
2.70 3.10
B
1.40 1.60
C
1.00 1.30
D
0.35 0.50
G 1.70 2.10
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
0.85 1.15
S
2.40 2.80
All Dimension in mm
Marking : 1333
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Sate-Source Voltage
Continuous Drain Current ³
Continuous Drain Current ³
Pulsed Drain Current ^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
S
Ratings
-20
±12
-550
-440
-2.5
1
0.008
-55~+150
Unit
V
V
mA
mA
A
W
W /^oC
o_C
Thermal Data
Parameter
Thermal Resistance Junction-ambient ³
Symbol
Rthj-a
Ratings
125
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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