SGT6920NH Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode MOSFET

Elektronische Bauelemente
SGT6920NH
6.8 A, 20 V, R_DS(ON) 22 mΩ
Dual-N Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Static
Gate-Threshold Voltage
VGS(th)
0.4
-
-
V VDS=VGS, ID=250uA
Gate-Body Leakage
IGSS
-
-
±100
nA VDS=0, VGS=±12V
Zero Gate Voltage Drain Current
On-State Drain Current ¹
-
-
1
VDS=16V, VGS=0
IDSS
uA
-
-
10
VDS=16V, VGS=0, TJ= 55°C
ID(on)
25
-
-
A VDS =5V, VGS=4.5V
Drain-Source On-Resistance ¹
-
RDS(ON)
-
-
22
VGS=4.5V, ID=1A
-
30
mΩ VGS=2.5V, ID=1A
Forward Transconductance ¹
-
-
46
VGS=1.8V, ID=1A
gfs
-
25
-
S VDS=10V, ID=1A
Diode Forward Voltage
VSD
-
0.7
-
Dynamic ²
V IS=1A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
6.2
-
Qgs
-
1
-
nC ^{VDS=10V, VGS=4.5V,}
ID=1A
Qgd
-
1.9
-
Turn-on Delay Time
Td(on)
-
12
-
Rise Time
Turn-off Delay Time
Tr
-
15
-
nS ^{VDD=10V, VGS=4.5V,}
Td(off)
-
56
-
RGEN=10Ω, ID=1A
Fall Time
Tf
-
17
-
Notes:
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
23-Jan-2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2