SGT6920NH Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode MOSFET

Elektronische Bauelemente
SGT6920NH
6.8 A, 20 V, R_DS(ON) 22 mΩ
Dual-N Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low RDS(on) and ensure
minimal power loss and heat dissipation. Typical applications
are DC-DC converters and power management in portable and
battery-powered products such as computers, printer , PCMCIA
cards, cellular and cordless telephones.
TSSOP-8
A
B
D
FEATURES
Low R_DS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe TSSOP-8
saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
TSSOP-8L
3K
Leader Size
13’ inch
J
H
F
E
L
K
G
C
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.10
6.20 6.60
1.00 1.20
4.30 4.50
-
1.15
0.9
1.10
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.45 0.75
0.19 0.30
0.65 REF.
0.05 0.15
0.127 REF
Top View
ABSOLUTE MAXIMUM RATINGS(T_A=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current ¹
TA=25°C
ID
TA=70°C
Pulsed Drain Current ²
IDM
Continuous Source Current (Diode Conduction) ¹
IS
Power Dissipation ¹
TA=25°C
PD
TA=70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient ¹
t ≦ 10 sec
Steady State
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
R_θJA
Rating
20
±8
6.8
5.4
30
1.5
1.2
0.8
-55 ~ 150
83
120
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
23-Jan-2013 Rev. A
Any changes of specification will not be informed individually.
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