SGM3055_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SGM3055
5.8A , 30V , R_DS(ON) 28 m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_J=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current ^TJ=25°C
T_J=55°C
Static Drain-Source On-Resistance ²
Total Gate Charge ²
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time ²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BV_DSS
△BV_DSS /△T_J
V_GS(th)
I_GSS
I_DSS
R_DS(ON)
Q_g
Q_gs
Q_gd
T_d(on)
T_r
T_d(off)
T_f
C_iss
C_oss
C_rss
30
-
-
V V_GS=0, I_D=250μA
- 0.021 -
V / °C Reference to 25°C, I_D=1mA
1.2 -
2.5
-
- ±100
-
-
1
-
-
5
-
-
28
-
-
40
-
6
8.4
- 2.5 3.5
- 2.1 2.9
- 2.4 4.8
- 7.8 14
-
22
44
-
4
8
- 572 800
-
81 112
-
65
91
V V_DS=V_GS, I_D=250μA
nA V_GS= ±20V
μA ^{VDS=24V, VGS=0}
V_DS=24V, V_GS=0
mΩ ^{VGS=10V, ID=5A}
V_GS=4.5V, I_D=4A
I_D=5A
nC V_DS=15V
V_GS=4.5V
V_DD=15V
I_D=5A
nS V_GS=10V
R_G=3.3Ω
R_D=1.9Ω
V_GS=0
pF V_DS=15V
f=1.0 MHz
Source-Drain Diode
Forward On Voltage²
V_SD
-
-
1.2
V I_S=3A, V_GS=0, T_J=25°C
Continuous Source Current(Body Diode) ^1.4
I_S
Pulsed Source Current(Body Diode) ^2.4
I_SM
-
-
5.8
A
V_D=V_G=0, V_S=1.2V
-
-
30
A
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150°C junction temperature
4. The data is theoretically the same as I_D and I_DM , in real applications, should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
29-May-2012 Rev. C
Any changes of specification will not be informed individually.
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