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| SGM3055_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SGM3055
5.8A , 30V , RDS(ON) 28 mï
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
DESCRIPTION
The GM3055 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
ï¬ Fast Switching
ï¬ Dynamic dv/dt Rating
ï¬ Repetitive Avalanche Rated
ï¬ Simple Drive Requirement
MARKING
3055
ï°ï°ï°ï°
ï° = Date code
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
SOT-89
A
Top View C B
4
K
L
E
123
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
4.05 4.25
2.40 2.60
1.40 1.60
3.00 REF.
0.40 0.52
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
-
0.89 1.20
0.35 0.41
0.70 0.80
1.50 REF.
D
ï«ïï
ïªï
G
ï¬ï
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA = 25°C
ID
TA = 70°C
Pulsed Drain Current 2
IDM
Power Dissipation 3
PD
Linear Derating Factor
Operating Junction & Storage Temperature
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
RθJA
Thermal Resistance Junction-Case1(Max).
RθJC
Rating
30
±20
5.8
4.7
30
1.5
0.0118
-55~150
85
30
Unit
V
V
A
A
A
W
W / °C
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
29-May-2012 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 4
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