SGM3055 Datasheet, PDF (2/6 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SGM3055
15A, 30V,RDS(ON) 100m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 ^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25 ^oC)
IDSS
Drain-Source Leakage Current(Tj=150 ^oC)
Static Drain-Source On-Resistance
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Min.
30
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.037
_
_
_
_
_
_
5.4
1.3
3.6
3.6
19.8
13
3.2
260
144
13
Max.
_
_
3.0
±100
25
250
80
100
_
_
_
_
_
_
_
_
_
_
Unit
V
V/ ^oC
Test Condition
VGS=0V, ID=250uA
Reference to 25^oC, ID=1mA
V
VDS=VGS, ID=250uA
nA
VGS=± 20V
uA
VDS=30V,VGS=0
uA
VDS=24V,VGS=0
VGS=10V, ID= 8A
m
VGS=4.5V, ID=6A
ID=8 A
nC
VDS=24V
VGS= 5V
VDS=15V
ID=8A
nS
VGS=10V
RG=3.4
RD=1.9
VGS=0V
pF
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage ²
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)¹
Symbol
VS D
IS
ISM
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
Min.
_
_
_
Typ.
_
_
_
Max.
1.3
15
50
Unit Test Condition
V
IS=15A,VGS=0V,Tj=25 ^oC
A
VD=VG=0V,VS=1.3V
A
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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